THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR)

被引：48

作者：

BRINGANS, RD ^{[1
]}

BACHRACH, RZ ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

关键词：

D O I：

10.1016/0038-1098(83)90346-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：83 / 86

页数：4

共 14 条

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[3] ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS
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[4] BRINGANS RD, UNPUB J VAC SCI TECH
[5] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS
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[6] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS
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[7] ANGULAR RESOLVED UPS OF SURFACE-STATES ON GAAS(111) PREPARED BY MOLECULAR-BEAM EPITAXY
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[J]. SURFACE SCIENCE, 1979, 82 (01) : 270 - 282
[8] LARSEN PK, 1982, J PHYS C SOLID STATE, V15, pL431, DOI 10.1088/0022-3719/15/13/010
[9] LARSEN PK, 1981, SOLID STATE COMMUN, V40, P459, DOI 10.1016/0038-1098(81)90861-9
[10] ANGULAR RESOLVED PHOTOEMISSION FROM SURFACE-STATES ON RECONSTRUCTED [100] GAAS-SURFACES
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