PERSISTENT PHOTOLUMINESCENCE QUENCHING OF 0.68-EV EMISSION IN UNDOPED SEMI-INSULATING GAAS

被引：39

作者：

YU, PW

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：330 / 332

页数：3

共 18 条

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APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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[5]

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[6] QUENCHING EFFECT OF LUMINESCENCE IN BULK SEMI-INSULATING GAAS [J].

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GUILLOT, G .

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[7]

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[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

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APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[9] A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM-ARSENIDE [J].

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[10]

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