INFLUENCE OF PHOTOEXCITATION ON HOPPING CONDUCTION IN NEUTRON-TRANSMUTATION-DOPED GAAS

被引:24
作者
SATOH, M
KAWAHARA, H
KURIYAMA, K
KAWAKUBO, T
YONEDA, K
KIMURA, I
机构
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN
[2] KYOTO UNIV,INST RES REACTOR,OSAKA 59004,JAPAN
关键词
D O I
10.1063/1.340014
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1099 / 1103
页数:5
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