ELECTRICAL BEHAVIOR OF FAST-NEUTRON IRRADIATED SEMIINSULATING GAAS DURING THERMAL RECOVERY

被引：18

作者：

GOLTZENE, A ^{[1
]}

SCHWAB, C ^{[1
]}

DAVID, JP ^{[1
]}

ROIZES, A ^{[1
]}

机构：

[1] CTR RECH TOULOUSE,OFF NATL ETUDES & RECH AEROSPATIALES,F-31055 TOULOUSE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：862 / 864

页数：3

共 10 条

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[10] TIGHT-BINDING CALCULATION OF ORBITAL RELAXATIONS AND HOPPING INTEGRAL MODIFICATIONS AROUND VACANCIES AND ANTISITE DEFECTS IN GAAS [J].

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