ION CHANNELING STUDY OF DAMAGE IN NEUTRON-IRRADIATED GAAS

被引：8

作者：

KURIYAMA, K

SATOH, M

YAHAGI, M

IWAMURA, K

KIM, C

KAWAKUBO, T

YONEDA, K

KIMURA, I

机构：

[1] KOREA UNIV, DEPT ELECT, SEOUL, SOUTH KOREA

[2] KYOTO UNIV, INST RES REACTOR, OSAKA 59004, JAPAN

[3] HOSEI UNIV, ION BEAM TECHNOL RES CTR, KOGANEI, TOKYO 184, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 22卷 / 04期

关键词：

D O I：

10.1016/0168-583X(87)90160-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：553 / 555

页数：3

共 18 条

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[4] ELECTRON-PARAMAGNETIC RESONANCE DETERMINATION OF THE GENERATION RATE OF AS ANTISITES IN FAST-NEUTRON IRRADIATED GAAS
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[5] LATTICE LOCATION OF CHROMIUM IN SEMI-INSULATING GAAS BY ION CHANNELING TECHNIQUES
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[6] DOPING OF PHOSPHORUS IN HYDROGENATED AMORPHOUS-SILICON BY A NEUTRON TRANSMUTATION DOPING TECHNIQUE
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KURIYAMA, K
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 786 - 788
[7] HAMANAKA H, 1985, 17TH P INT C PHYS SE, P851
[8] CHANNELING OF 1-MEV HE+ IONS IN NACL - DAMAGE AND TEMPERATURE EFFECTS
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[J]. PHYSICAL REVIEW B, 1973, 8 (03): : 931 - 935
[9] KITTEL C, 1976, INTRO SOLID STATE PH, P457
[10] ION CHANNELING EFFECT OF IN DOPANT IN SEMIINSULATING GAAS
KURIYAMA, K
SATOH, M
KIM, C
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 411 - 412

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