LATTICE LOCATION OF CHROMIUM IN SEMI-INSULATING GAAS BY ION CHANNELING TECHNIQUES

被引：10

作者：

HAGA, T

ABE, Y

机构：

来源：

关键词：

D O I：

10.1063/1.94015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：599 / 601

页数：3

共 10 条

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[3] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[4] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS
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[J]. PHYSICAL REVIEW B, 1977, 15 (01): : 17 - 22
[5] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION
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[J]. PHYSICAL REVIEW B, 1977, 16 (03): : 971 - 973
[6] MODEL RELATING ELECTRICAL-PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1262 - 1267
[7] PICOLI G, 1980, P SEMIINSULATING 3 5
[8] X-RAY AND RUTHERFORD BACKSCATTERING YIELDS FROM CHANNELED HELIUM IONS IN GAAS
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EWAN, GT
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 39 (3-4): : 205 - 212
[9] PRONKO PP, 1982, J APPL PHYS, V53, P5612
[10] DETERMINATION OF SUBSTITUTIONAL DOPANT AND HOLE CONCENTRATIONS IN ZN-DIFFUSED SINGLE-CRYSTAL INP
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 760 - 762