INFLUENCE OF PHOTOEXCITATION ON HOPPING CONDUCTION IN NEUTRON-TRANSMUTATION-DOPED GAAS

被引：24

作者：

SATOH, M

KAWAHARA, H

KURIYAMA, K

KAWAKUBO, T

YONEDA, K

KIMURA, I

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

[2] KYOTO UNIV,INST RES REACTOR,OSAKA 59004,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1099 / 1103

页数：5

共 19 条

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[15] INFLUENCE OF FAST-NEUTRONS ON ELECTRICAL-PROPERTIES IN NEUTRON TRANSMUTATION DOPED GAAS - NEW ANNEALING STAGE [J].

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[16]

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[17] ELECTRICAL-PROPERTIES OF NEUTRON-TRANSMUTATION-DOPED GAAS BELOW 450-K [J].

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[18] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J].

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[19]

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