GAMMA-RAY ENHANCED QUENCHING PHENOMENON OF PHOTOCONDUCTANCE IN UNDOPED AND IN-DOPED SEMI-INSULATING GAAS

被引:7
作者
KURIYAMA, K
KAWAHARA, H
SATOH, M
KAWAKUBO, T
机构
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN
[2] KYOTO UNIV,RES REACTOR INST,KUMATORI,OSAKA 59004,JAPAN
关键词
D O I
10.1063/1.100070
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1074 / 1076
页数:3
相关论文
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