QUENCHING PHENOMENON OF PHOTOCONDUCTANCE IN INDIUM DOPED DISLOCATION FREE GAAS

被引：6

作者：

SATOH, M

KAWAHARA, H

KURIYAMA, K

KIM, C

机构：

[1] HOSEI UNIV, ION BEAM TECHNOL, TOKYO 184, JAPAN

[2] KOREA UNIV, DEPT ELECTR ENGN, Seoul, SOUTH KOREA

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 02期

关键词：

D O I：

10.1016/0038-1098(88)90950-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：139 / 141

页数：3

共 18 条

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[3]

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[8] COMPENSATION MECHANISMS IN GAAS [J].

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[9]

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[10]

MCGUIGAN S, 1986, SEMIINSULATING 3 5 M, P29

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