Crystal structures and ferroelectric properties of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9

被引：458

作者：

Shimakawa, Y

Kubo, Y

Nakagawa, Y

Kamiyama, T

Asano, H

Izumi, F

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058577, Japan

[3] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 13期

关键词：

D O I：

10.1063/1.123708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystal structures of ferroelectric materials of stoichiometric SrBi2Ta2O9 (T (C) = 300 degrees C) and Sr-deficient-and-Bi-excess Sr0.8Bi2.2Ta2O9 (T (C) = 400 degrees C) were refined by neutron powder diffraction. Bi2O2 layer and TaO6 octahedra are considerably distorted and atomic displacements along the a axis cause ferroelectric spontaneous polarization. In Sr0.8Bi2.2Ta2O9, both Bi substitution and cation vacancies at the Sr site were revealed and a chemical composition of (Sr0.82Bi0.12)Bi2Ta2O9.0 was obtained. The calculated polarization of Sr0.8Bi2.2Ta2O9 is larger than that of the stoichiometric sample, which is consistent with observations of remanent polarization in thin-film capacitors. The Bi substitution and the cation vacancies at the Sr site enhance structural distortion in the TaO6 octahedra and lead to the larger ferroelectric spontaneous polarization and the higher Curie temperature. (C) 1999 American Institute of Physics.

引用

页码：1904 / 1906

页数：3

共 10 条

[1] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS [J].