Nonlinear operation of the Y-branch switch:: Ballistic switching mode at room temperature

We have studied symmetric Y-branch switch devices based on InP/InGaAs heterostructures under influence of finite bias between the branches. In this nonlinear operating regime, the applied bias breakes the original geometrical symmetry of the device and a very efficient switching and rectifying properties are observed. These effects are due to ballistic electron propagation, in contrast to conventional rectifying devices relying on depletion in p-n junctions. As the ballistic propagation characteristics remain as long as the carrier mean-free-path is not shorter than the device size, we can observe the switching and rectifying behavior even at room temperature.