Ballistic transport at room temperature in deeply etched cross-junctions

被引：12

作者：

Hieke, K ^{[1
]}

Wesström, JO ^{[1
]}

Forsberg, E ^{[1
]}

Carlström, CF ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Elect, Lab Photon & Microwave Engn, S-16440 Kista, Sweden

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 03期

关键词：

D O I：

10.1088/0268-1242/15/3/309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measured the transmission through manoscopic cross-junctions at variable temperature and bias. The devices were prepared by deep etching through a two-dimensional electron gas in InGaAs/InP samples. Our experiments show that the transmission characteristic is partly ballistic even at room temperature. The measurements are analysed in terms of an equivalent network, and the involved resistances are related to the electrons' mean free path. Different scattering mechanisms are considered to account for the transition from ballistic to diffusive transport.

引用

页码：272 / 276

页数：5

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