HIGH-TEMPERATURE BALLISTIC TRANSPORT OBSERVED IN ALGAAS/INGAAS/GAAS SMALL 4-TERMINAL STRUCTURES

被引：26

作者：

HIRAYAMA, Y

TARUCHA, S

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Midori-cho

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 17期

关键词：

D O I：

10.1063/1.110799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Four-terminal structures are fabricated by focused-ion-beam (FIB) scanning on an AlGaAs/InGaAs/GaAs modulation doped structure. The large carrier density of this system results in small depletion spreading and a 260-nm-square four-terminal structure is successfully formed. The bend resistance of this structure indicates that ballistic coupling between two facing terminals remains up to room temperature. Thermal broadening of electron energy enhances the ballistic nature of the system at high temperature.

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页码：2366 / 2368

页数：3

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