Well-aligned ZnO nanorods for device applications: Synthesis and characterisation of ZnO nanorods and n-ZnO/p-Si heterojunction diodes

被引：33

作者：

Reddy, N. Koteeswara ^{[1
]}

Ahsanulhaq, Q. ^{[1
]}

Kim, J. H. ^{[1
]}

Hahn, Y. B. ^{[1
]}

机构：

[1] Chonbuk Natl Univ, BK 21 Ctr Future Energy Mat & Devices, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

来源：

EPL | 2008年 / 81卷 / 03期

关键词：

D O I：

10.1209/0295-5075/81/38001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Well-aligned, low-resistive zinc oxide ( ZnO) nanorods were grown on ZnO-coated glass and p-Si substrates using a simple and economic solution method. The device performance of ZnO nanorods has been investigated by studying their p-n junction diode behaviour at room temperature. The as-grown n-ZnO/p-Si diode exhibited a low turn-on voltage and saturation current of similar to 2.25 V and similar to 1.27 mu A, respectively, with a diode quality factor of 1.9. These investigations reveal that the well-aligned ZnO nanorod structures can be used as an active layer in the fabrication of efficient optoelectronic nano-devices. Copyright (C) EPLA, 2008

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