Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

被引：28

作者：

Alves, N. ^{[1
]}

Taylor, D. M. ^{[1
]}

机构：

[1] Bangor Univ, Sch Elect Engn, Bangor LL57 1UT, Gwynedd, Wales

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2897238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

引用

页数：3

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