Thin film properties by facing targets sputtering system

被引:27
作者
Kim, KH
Son, IH
Song, KB
Kong, SH
Keum, MJ
Nakagawa, S
Naoe, M
机构
[1] Kyungwon Univ, Sch Elect & Elect Engn, Seongnam 461701, Kyunggi, South Korea
[2] Shinsung Coll, Dept Elect Engn, Tangjin 343860, Chungnam, South Korea
[3] KOLON Cent Res Inst, Yongin 494910, Kyunggi, South Korea
[4] Tokyo Inst Technol, Dept Phys Elect, Tokyo 152, Japan
关键词
facing targets sputtering; Co-Cr thin films; c-axis crystalline orientation; confining magnetic field; plasma-free; dispersion angle;
D O I
10.1016/S0169-4332(00)00694-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, film thickness distribution and c-axis crystalline orientation of deposited thin films were studied after preparing Co-Cr thin films, a promising ultra-high density perpendicular magnetic recording media, with a facing targets sputtering (FTS) apparatus. Electrical discharge characteristics needed for the optimum operation of sputter device was also studied in order to prepare thin films of superior c-axis crystalline orientation with FTS method (apparatus) in which thin film of fine quality can be formed because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. As a result of the study, it is confirmed that the FTS method can give stable working under broad magnetic field and range of gas pressure and stable electrical discharge under low Ar gas pressure, Film thickness of prepared thin film shows fairy regular distribution and could obtain good thin films whose dispersion angle of c-axis crystalline orientation is about 3.5 degrees. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:410 / 414
页数:5
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