Studies on spontaneous formation of ID nanocrystals of silicon carbide

被引：13

作者：

Huczko, A

Lange, H

Bystrzejewski, M

Rummeli, MH

Gemming, T

Cudzilo, S

机构：

[1] Univ Warsaw, Dept Chem, PL-02093 Warsaw, Poland

[2] IFW Dresden, D-01069 Dresden, Germany

[3] Mil Univ Technol, Inst Chem, PL-00908 Warsaw, Poland

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2005年 / 40卷 / 4-5期

关键词：

spontaneous formation; ID nanocrystals; silicon carbide; combustion synthesis;

D O I：

10.1002/crat.200410347

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Novel nanostructures have been formed spontaneously during the thermolysis of mixtures containing halogenohydrocarbons and Si-related compounds as a reducing agent in a calorimetric bomb. Elemental analysis, XRD (X-Ray Diffraction), EELS (Electron Energy Loss Spectroscopy), EDX (Energy Disspersive X-ray spectroscopy), IR (InfraRed spectroscopy), Raman spectroscopy, HR SEM (High Resolution Scanning Electron Spectroscopy) and TEM (Transmission Electron Spectroscopy) were used to determine the chemical composition and structural features of the products. They contain well-crystallized elongated ID single crystals of SiC nanofibres, coated with a thin SiO2 amorphous layer, and crystallized carbon nanoparticles.

引用

页码：334 / 339

页数：6

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