Preferred orientation and anisotropic growth in polycrystalline ZnO:Al films prepared by magnetron sputtering

被引:18
作者
Fenske, F
Selle, B
Birkholz, M
机构
[1] Hahn Meitner Inst Berlin GmbH, Silizium Photovoltaik, D-12489 Berlin, Germany
[2] Fraunhofer Inst Schicht & Oberflachentech, D-38108 Braunschweig, Germany
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 20-23期
关键词
thin film structure and growth; texture; preferred orientation; ZnO : Al; transparent conductive oxide; magnetron sputter deposition;
D O I
10.1143/JJAP.44.L662
中图分类号
O59 [应用物理学];
学科分类号
摘要
A thorough growth study of thin polycrystalline ZnO:Al samples prepared by DC magnetron sputtering is presented. The atomic areal density as a function of deposition time t was determined by Rutherford backscattering (RBS), from which a growth rate G(t) can be defined. It was found, that in the initial stages of film growth G(t) increases with increasing deposition time up to a thickness of about 300 nm, although the process conditions were kept constant. In addition, the preferred orientation of each sample, as characterized by a < 00.l > fiber texture, was quantified by evaluating the texture index J for each sample. The course of J(t) was identified to concomitantly increase with G(t). The variation of both, growth rate and preferred orientation, with deposition time is interpreted to be caused by an anisotropic growth velocity of ZnO grains. It seems that such a close correlation between growth rate and texture has not been observed so far.
引用
收藏
页码:L662 / L664
页数:3
相关论文
共 29 条
[1]   EFFECTS OF HIGH-FLUX LOW-ENERGY (20-100 EV) ION IRRADIATION DURING DEPOSITION ON THE MICROSTRUCTURE AND PREFERRED ORIENTATION OF TI0.5AL0.5N ALLOYS GROWN BY ULTRA-HIGH-VACUUM REACTIVE MAGNETRON SPUTTERING [J].
ADIBI, F ;
PETROV, I ;
GREENE, JE ;
HULTMAN, L ;
SUNDGREN, JE .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8580-8589
[2]   MECHANISMS OF VOLTAGE-CONTROLLED, REACTIVE, PLANAR MAGNETRON SPUTTERING OF AL IN AR-N2 AND AR-O2 ATMOSPHERES [J].
AFFINITO, J ;
PARSONS, RR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (03) :1275-1284
[3]   Fundamental structure forming phenomena of polycrystalline films and the structure zone models [J].
Barna, PB ;
Adamik, M .
THIN SOLID FILMS, 1998, 317 (1-2) :27-33
[4]   Structure-function relationship between preferred orientation of crystallites and electrical resistivity in thin polycrystalline ZnO:Al films -: art. no. 205414 [J].
Birkholz, M ;
Selle, B ;
Fenske, F ;
Fuhs, W .
PHYSICAL REVIEW B, 2003, 68 (20)
[5]   Crystallinity of thin silicon films deposited at low temperatures: Combined effect of biasing and structuring the substrate [J].
Birkholz, M ;
Conrad, E ;
Fuhs, W .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (6A) :4176-4180
[6]  
BIRKHOLZ M, 2004, IN PRESS J APPL PHYS, V96
[7]   STRUCTURE AND CRYSTAL-GROWTH OF ATMOSPHERIC AND LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON FILMS [J].
BISARO, R ;
MAGARINO, J ;
PROUST, N ;
ZELLAMA, K .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1167-1178
[8]   THEORY OF THIN-FILM ORIENTATION BY ION-BOMBARDMENT DURING DEPOSITION [J].
BRADLEY, RM ;
HARPER, JME ;
SMITH, DA .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4160-4164
[9]  
Bunge HJ, 1982, TEXTURE ANAL MAT SCI
[10]   Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition [J].
Choi, JH ;
Tabata, H ;
Kawai, T .
JOURNAL OF CRYSTAL GROWTH, 2001, 226 (04) :493-500