MECHANISMS OF VOLTAGE-CONTROLLED, REACTIVE, PLANAR MAGNETRON SPUTTERING OF AL IN AR-N2 AND AR-O2 ATMOSPHERES

被引:123
作者
AFFINITO, J
PARSONS, RR
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1984年 / 2卷 / 03期
关键词
D O I
10.1116/1.572395
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:1275 / 1284
页数:10
相关论文
共 25 条
[1]   DEPOSITION RATE OF METALLIC THIN-FILMS IN REACTIVE SPUTTERING PROCESS [J].
ABE, T ;
YAMASHINA, T .
THIN SOLID FILMS, 1975, 30 (01) :19-27
[2]   THE EFFECT OF O-2 ON REACTIVELY SPUTTERED ZINC-OXIDE [J].
AITA, CR ;
PURDES, AJ ;
LAD, RJ ;
FUNKENBUSCH, PD .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5533-5536
[3]   ARGON-OXYGEN INTERACTION IN RF-SPUTTERING GLOW-DISCHARGES [J].
AITA, CR ;
MARHIC, ME .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6584-6587
[4]   ION ENERGIES AT CATHODE OF A GLOW DISCHARGE [J].
DAVIS, WD ;
VANDERSLICE, TA .
PHYSICAL REVIEW, 1963, 131 (01) :219-&
[5]  
HAYWARD DO, 1964, CHEMISORPTION, P75
[6]   REACTIVE SPUTTERING OF METALS IN OXIDIZING ATMOSPHERES [J].
HELLER, J .
THIN SOLID FILMS, 1973, 7 (02) :163-176
[7]   FABRICATION OF NB-NBOX-PB JOSEPHSON TUNNEL-JUNCTIONS USING RF GLOW-DISCHARGE OXIDATION [J].
KARULKAR, PC ;
NORDMAN, JE .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7051-7059
[8]   OXIDATION STUDIES OF HYDROGENATED AMORPHOUS-SILICON [J].
KELEMEN, SR ;
GOLDSTEIN, Y ;
ABELES, B .
SURFACE SCIENCE, 1982, 116 (03) :488-500
[9]   PREPARATION OF AIN COATINGS ON MO BY RF-REACTIVE ION PLATING - THE DEPOSITION MECHANISM [J].
KITAJIMA, M ;
FUKUTOMI, M ;
OKADA, M ;
WATANABE, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1588-1595
[10]   INITIAL OXIDATION OF ALUMINUM THIN-FILMS AT ROOM-TEMPERATURE [J].
KRUEGER, WH ;
POLLACK, SR .
SURFACE SCIENCE, 1972, 30 (02) :263-&