Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures

被引:37
作者
He, Haiping [1 ]
Wang, Yanjie [1 ]
Wang, Jingrui [1 ]
Ye, Zhizhen [1 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
关键词
GREEN;
D O I
10.1039/c1cp21527b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Negative thermal quenching of both the excitonic and green emissions is observed in ZnO nanosheets, from which the energy level of surface traps can be extracted based on a model of multi-level transitions. The present study demonstrates a nondestructive and easy method to determine the trap levels in semiconductor nanostructures.
引用
收藏
页码:14902 / 14905
页数:4
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