Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays

被引：285

作者：

Cao, BQ

Cai, WP ^{[1
]}

Zeng, HB

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China

[2] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Anhui, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 16期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2195694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence properties of ZnO nanoneedle arrays, grown on silicon substrate by electrodeposition, are studied over the temperatures from 10 K to 300 K. There exist three emission bands in ultraviolet, violet, and green regions, respectively. With increasing temperature, these bands show different temperature dependences: A normal redshift for the ultraviolet emission, S-shaped shift for the violet emission, and blueshift for the green one. The origins of these three bands and their temperature-dependent shifts are explained based on defect levels (zinc interstitial and oxygen vacancy levels) and carrier localization effect at the defect levels in addition to band-gap shrinkage.

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页数：3

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