Magnetic interactions with charge carriers in III-V diluted magnetic semiconductors

被引：13

作者：

Van Bockstal, L

Van Esch, A

Bogaerts, R

Herlach, F

van Steenbergen, A

De Boeck, J

Borghs, G

机构：

[1] Katholieke Univ Leuven, Vaste Stof Fys Magnetisme Lab, B-3001 Leuven, Belgium

[2] Univ Nijmegen, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands

[3] IMEC, B-3001 Leuven, Belgium

来源：

PHYSICA B | 1998年 / 246卷

关键词：

diluted magnetic semiconductor; ferromagnetism; metal-to-insulator transition;

D O I：

10.1016/S0921-4526(97)00910-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using a low-temperature MBE growth procedure, Ga1-xMnxAs is obtained with Mn concentrations up to x approximate to 9%. At a temperature around 50 K, a paramagnetic to ferromagnetic phase transition occurs as a result of the interaction between Mn-h complexes. A model based on a mean-field approach explains the observed temperature dependence of the magnetisation. The magnetic behaviour is linked to the magnetotransport features. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：258 / 261

页数：4

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