Ultrafast x-ray measurement of laser heating in semiconductors:: Parameters determining the melting threshold -: art. no. 193306

被引：61

作者：

Cavalleri, A

Siders, CW

Rose-Petruck, C

Jimenez, R

Tóth, C

Squier, JA

Barty, CPJ

Wilson, KR

Sokolowski-Tinten, K

von Hoegen, MH

von der Linde, D

机构：

[1] Univ Calif San Diego, La Jolla, CA 92093 USA

[2] Univ Essen Gesamthsch, Inst Laser & Plasmaphys, D-45117 Essen, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.63.193306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors.

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页数：4

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