The influence of growth temperature on ZnO nanowires

被引：57

作者：

Fang, F. ^{[1
,2
]}

Zhao, D. X. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Shen, D. Z. ^{[1
]}

Lu, Y. M. ^{[1
]}

Fan, X. W. ^{[1
]}

Li, B. H. ^{[1
]}

Wang, X. H. ^{[3
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Optics Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100864, Peoples R China

[3] Changchun Univ Sci & Technol, Natl Key Lab High Power Semiconductor Laser, Changchun 130022, Peoples R China

来源：

MATERIALS LETTERS | 2008年 / 62卷 / 6-7期

基金：

中国国家自然科学基金;

关键词：

ZnO; nanomaterials; semiconductors;

D O I：

10.1016/j.matlet.2007.07.073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO nanowires have been successfully synthesized on Si(100) substrate by a simple physical vapor deposition method. Thin film ZnO layer used as the nucleation site can avoid the contamination from the metal catalysts, and it can also control the growth direction of ZnO nanowires. Well-aligned ZnO nanowire arrays along the normal direction of the substrate can be obtained by controlling different growth temperature, which was demonstrated by XRD and FESEM analysis. A strong ultraviolet emission at room temperature was observed in all ZnO nanostructures. In addition, the growth mechanisms of the ZnO nanowires with different growth temperature is discussed in details. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1092 / 1095

页数：4

共 19 条

[1] Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer [J].

Conley, JF ;

Stecker, L ;

Ono, Y .

NANOTECHNOLOGY, 2005, 16 (02) :292-296

[2] Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species [J].

Cui, Y ;

Wei, QQ ;

Park, HK ;

Lieber, CM .

SCIENCE, 2001, 293 (5533) :1289-1292

[3] Controllable growth of vertically aligned zinc oxide nanowires using vapour deposition [J].

Dalal, S. H. ;

Baptista, D. L. ;

Teo, K. B. K. ;

Lacerda, R. G. ;

Jefferson, D. A. ;

Milne, W. I. .

NANOTECHNOLOGY, 2006, 17 (19) :4811-4818

[4] Well-aligned ZnO nanowire arrays fabricated on silicon substrates [J].

Geng, CY ;

Jiang, Y ;

Yao, Y ;

Meng, XM ;

Zapien, JA ;

Lee, CS ;

Lifshitz, Y ;

Lee, ST .

ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (06) :589-594

[5] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[6] Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties [J].

Jeong, JS ;

Lee, JY ;

Cho, JH ;

Lee, CJ ;

An, SJ ;

Yi, GC ;

Gronsky, R .

NANOTECHNOLOGY, 2005, 16 (10) :2455-2461

[7] Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires [J].

Kim, TW ;

Kawazoe, T ;

Yamazaki, S ;

Ohtsu, M ;

Sekiguchi, T .

APPLIED PHYSICS LETTERS, 2004, 84 (17) :3358-3360

[8] Field emission from well-aligned zinc oxide nanowires grown at low temperature [J].

Lee, CJ ;

Lee, TJ ;

Lyu, SC ;

Zhang, Y ;

Ruh, H ;

Lee, HJ .

APPLIED PHYSICS LETTERS, 2002, 81 (19) :3648-3650

[9] Evolution of the morphology and optical properties of ZnO nanowires during catalyst-free growth by thermal evaporation [J].

Lee, W ;

Jeong, MC ;

Myoung, JM .

NANOTECHNOLOGY, 2004, 15 (11) :1441-1445

[10] High-density, ordered ultraviolet light-emitting ZnO nanowire arrays [J].

Liu, CH ;

Zapien, JA ;

Yao, Y ;

Meng, XM ;

Lee, CS ;

Fan, SS ;

Lifshitz, Y ;

Lee, ST .

ADVANCED MATERIALS, 2003, 15 (10) :838-+

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