Hydrothermal preparation and characterization of rod-like ultrafine powders of bismuth sulfide

被引:54
作者
Yu, SH
Yang, J
Wu, YS
Han, ZH
Xie, Y
Qian, YT [1 ]
机构
[1] Univ Sci & Technol China, Struct Res Lab, Anhua 230026, Peoples R China
[2] Univ Sci & Technol China, Dept Chem, Anhua 230026, Peoples R China
关键词
inorganic compounds; semiconductors; chemical synthesis; X-ray diffraction;
D O I
10.1016/S0025-5408(98)00161-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Uniform rod-like ultrafine powders of Bi2S3 with a diameter of 40 nm and a length of up to 150 nm have been successfully prepared by the hydrothermal treatment of an alkaline sol (pH = 8.0-10.0) from BiCl3 and Na2S . 9H(2)O with EDTA as complexing agent at relatively low temperature. Powder X-ray diffraction (XRD) pattern indicated that the product was pure orthorhombic Bi2S3 phase with cell constants a = 11.138, b = 11.290, and c = 3.980 Angstrom. The optimum condition for crystallization of amorphous Bi2S3 is hydrothermal treatment at 100-150 degrees C for 6 to 12 h. The X-ray photoelectron spectra and infrared (IR) spectra confirmed that the product was of high purity, (C) 1998 Elsevier Science Ltd.
引用
收藏
页码:1661 / 1666
页数:6
相关论文
共 18 条
[1]   GROWTH AND MICROHARDNESS STUDIES OF CHALCOGENIDES OF ARSENIC, ANTIMONY AND BISMUTH [J].
ARIVUOLI, D ;
GNANAM, FD ;
RAMASAMY, P .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1988, 7 (07) :711-713
[2]   A CHEMICAL METHOD FOR THE DEPOSITION OF BISMUTH SULFIDE THIN-FILMS [J].
BISWAS, S ;
MONDAL, A ;
MUKHERJEE, D ;
PRAMANIK, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :48-52
[3]   ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].
BLACK, J ;
CONWELL, EM ;
SEIGLE, L ;
SPENCER, CW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (03) :240-251
[4]   STUDIES ON THE THERMAL-DECOMPOSITION OF ALKALI-METAL THIOSULFATOBISMUTHATES(III) [J].
CYGANSKI, A ;
KOBYLECKA, J .
THERMOCHIMICA ACTA, 1981, 45 (01) :65-77
[5]  
DESAI JD, 1993, INDIAN J PURE AP PHY, V31, P152
[6]   STUDY AND DEVELOPMENT OF A GENERIC ELECTROCHEMICAL ION-EXCHANGE PROCESS TO FORM MXS OPTOELECTRONIC MATERIALS FROM ZNS PRECURSOR FILMS FORMED BY CHEMICAL-PRECIPITATION SOLUTION DEPOSITION [J].
ENGELKEN, RD ;
ALI, S ;
CHANG, LN ;
BRINKLEY, C ;
TURNER, K ;
HESTER, C .
MATERIALS LETTERS, 1990, 10 (06) :264-274
[7]   STUDIES ON THE STRUCTURE AND MORPHOLOGY OF ULTRAFINE PARTICLES OF METALLIC SULFIDES [J].
KAITO, C ;
SAITO, Y ;
FUJITA, K .
JOURNAL OF CRYSTAL GROWTH, 1989, 94 (04) :967-977
[8]  
Larionov S. V., 1979, IZV SIB OTD AN KHIM, V3, P94
[9]   CHEMICAL METHODS FOR THE DEPOSITION OF THIN-FILMS OF BI2S3 [J].
LOKHANDE, CD ;
YERMUNE, VS ;
PAWAR, SH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (07) :1852-1853
[10]   STRUCTURAL CHARACTERIZATION OF BI2-XSBXS3 FILMS PREPARED BY THE DIP-DRY METHOD [J].
NAYAK, BB ;
ACHARYA, HN ;
MITRA, GB ;
MATHUR, BK .
THIN SOLID FILMS, 1983, 105 (01) :17-24