Effect of disorder on a graphene p-n junction

被引：76

作者：

Fogler, M. M. ^{[1
]}

Novikov, D. S. ^{[2
,3
]}

Glazman, L. I. ^{[2
,3
]}

Shklovskii, B. I. ^{[2
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Minnesota, WI Fine Theoret Phys Inst, Minneapolis, MN 55455 USA

[3] Yale Univ, Dept Phys, New Haven, CT 06511 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.77.075420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.

引用

页数：6

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