A Bergman cyclization approach to polymers for thin-film lithography

被引：52

作者：

Chen, XH

Tolbert, LM ^{[1
]}

Hess, DW

Henderson, C

机构：

[1] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Chem Engn, Atlanta, GA 30332 USA

来源：

MACROMOLECULES | 2001年 / 34卷 / 12期

关键词：

D O I：

10.1021/ma002071o

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A new polymer, poly(3,4-bis(phenylethynyl)styrene), has been synthesized that undergoes a Bergman reaction upon heating to yield a highly aromatic material. The occurrence of the cycloaromatization reaction is characterized through thermal analysis and absorption spectroscopy. The plasma etch resistance of the polymer has been measured by reactive ion etching (RIE) in sulfur hexafluoride and oxygen plasmas and is shown to be superior to other conventional organic plasma etch barriers.

引用

页码：4104 / 4108

页数：5

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