Effects of embedded crystallites in amorphous silicon on light-induced defect creation

被引：85

作者：

Kamei, T ^{[1
]}

Stradins, P ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 12期

关键词：

D O I：

10.1063/1.123662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate effects of embedded crystallites in hydrogenated amorphous silicon on light-induced metastable dangling-bond defect creation in a systematic manner. Inclusion of a small volume fraction of crystallites into the amorphous matrix significantly suppresses defect creation against moderate light illumination. Excess carriers generated in the amorphous matrix tend to recombine in the embedded crystallites, which suppresses nonradiative recombination within the amorphous matrix and the subsequent defect creation. The presence of a small volume fraction of crystallites, however, is no longer effective to improve the stability against strong light exposure such as pulsed laser irradiation. In this case, the higher carrier concentration favors bimolecular direct carrier recombination within the amorphous matrix. (C) 1999 American Institute of Physics. [S0003-6951(99)03312-4].

引用

页码：1707 / 1709

页数：3

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