Imaging of trapped charge in SiO2 and at the SiO2-Si interface

被引：32

作者：

Ludeke, R ^{[1
]}

Cartier, E ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 25期

关键词：

D O I：

10.1063/1.1380396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charged defects in SiO2 and at the SiO2-Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial P-b centers in n- and p-type samples were identified from simultaneously recorded Kelvin images. Limited trap occupancy determined by the local, bias controlled Fermi level, and strong band bending lead to unusually sharp images of trapped charge. (C) 2001 American Institute of Physics.

引用

页码：3998 / 4000

页数：3

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