Near-field scanning optical microscopy of polarization bistable laser diodes

被引：19

作者：

Lienau, C

Richter, A

Klehr, A

Elsaesser, T

机构：

[1] Max-Born-Inst. F. Nichtlineare O.

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TE/TM polarization bistability in a lambda=1.3 mu m ridge-waveguide InGaAsP/InP bulk laser is studied by near-field scanning optical microscopy with an optical resolution of better than lambda/8. The near-field mode profiles of TE and TM emission show different lateral widths and distinctly different mode center positions. This lateral shift is related to a nonuniform strain distribution along the active layer. Based on this strain gradient, we present a model that accounts for the hysteresislike current dependence of the polarization resolved laser output. (C) 1996 American Institute of Physics.

引用

页码：2471 / 2473

页数：3

共 14 条

[1] POLARIZATION BISTABILITY IN STRAINED RIDGE-WAVE-GUIDE INGAASP/INP LASERS - EXPERIMENT AND THEORY [J].