Co-doping effects in rare-earth-doped planar waveguides

被引:13
作者
Bonar, JR
Aitchison, JS
机构
[1] Department of Electronics and Electrical Engineering, University of Glasgow
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 1996年 / 143卷 / 05期
关键词
co-doping effects; rare-earth-doped planar waveguides;
D O I
10.1049/ip-opt:19960732
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Results on rare-earth-doped lasers and amplifiers in planar silica waveguides fabricated by flame hydrolysis deposition (FHD) and reactive ion etching (RIE) are presented. The authors review their results on the optimisation of doping levels, co-dopant species, fusing temperature, fusing time and glass composition to reduce both scatter loss and ion-ion interactions. Two different doping techniques have been investigated and the planar films produced by each are compared. These glasses have been used to produce waveguide lasers in both Nd3+ and Er3+ doped silica.
引用
收藏
页码:293 / 297
页数:5
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