Femtosecond near-field optical spectroscopy of implantation patterned semiconductors

被引：54

作者：

Nechay, BA ^{[1
]}

Siegner, U ^{[1
]}

Morier-Genoud, F ^{[1
]}

Schertel, A ^{[1
]}

Keller, U ^{[1
]}

机构：

[1] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.123133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a femtosecond-resolved near-field scanning optical microscope, using a diffraction-limited pump and near-field probe configuration, which allows us to measure carrier dynamics with a spatial resolution of similar to 150 nm and a time resolution of similar to 250 fs. This instrument is used for near-field degenerate pump-probe studies of carrier dynamics in GaAs/AlGaAs single quantum well samples locally patterned by focused-ion-beam (FIB) implantation. We find that lateral carrier diffusion across the nanometer-scale FIB pattern plays a significant role in the decay of the excited carriers. (C) 1999 American Institute of Physics. [S0003-6951(99)02901-0].

引用

页码：61 / 63

页数：3

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