Real-space transfer and trapping of carriers into single GaAs quantum wires studied by near-field optical spectroscopy

被引：121

作者：

Richter, A ^{[1
]}

Behme, G ^{[1
]}

Suptitz, M ^{[1
]}

Lienau, C ^{[1
]}

Elsaesser, T ^{[1
]}

Ramsteiner, M ^{[1
]}

Notzel, R ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKT,D-10117 BERLIN,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.79.2145

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first near-field optical study of single GaAs quantum wires grown on patterned (311)A GaAs surfaces. Spatially resolved optical spectra at a temperature of 10 K give evidence for one-dimensional carrier confinement and subband structure. At 300 K, electron-hole pairs in continuum slates undergo diffusive real-space transfer over a length of several microns determined by hole mobility and trapping by optical phonon emission. Optical phonon scattering of carriers in the quantum wire establishes a quasiequilibrium carrier distribution in both wire and continuum states.

引用

页码：2145 / 2148

页数：4

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