RECOMBINATION KINETICS AND INTERSUBBAND RELAXATION IN SEMICONDUCTOR QUANTUM WIRES

被引:41
作者
GRUNDMANN, M
CHRISTEN, J
JOSCHKO, M
STIER, O
BIMBERG, D
KAPON, E
机构
[1] SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND
[2] OTTO VON GUERICKE UNIV,D-39016 MAGDEBURG,GERMANY
关键词
D O I
10.1088/0268-1242/9/11S/014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a detailed and systematic investigation of carrier capture, relaxation, cooling and radiative recombination in a one-dimensional semiconductor quantum wire of high structural perfection and optical quality over a large range of excitation (carrier) densities. Experimental evidence for a complete lack of 1D bandgap renormalization is found. Even up to high carrier densities, > 10(6) cm-1, where strong band filling is already present and directly visible in the luminescence, no shift of bandgap to low energy is found. The carrier cooling in 1D is appreciably slower than in comparable 2D structures, thus leading to high carrier temperatures. This confirms theoretical predictions of reduced phonon scattering probability in one-dimensional structures. The temperature dependence of the radiative lifetime of the 1D carriers is investigated. The theoretically predicted square-rootT dependence is not found. On the contrary an empirical tau(rad) = 0.02 T ns K-1 law is fulfilled.
引用
收藏
页码:1939 / 1945
页数:7
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