Fabrication of gated diamond field emitter array using a selective diamond growth process

被引：3

作者：

Ha, SC ^{[1
]}

Kang, DH

Kim, KB

Min, SH

Kim, IH

Lee, JD

机构：

[1] Seoul Natl Univ, Div Engn & Mat Sci, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151742, South Korea

[3] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

THIN SOLID FILMS | 1999年 / 341卷 / 1-2期

关键词：

gated diamond field emitter array; selective diamond growth; bias enhanced nucleation;

D O I：

10.1016/S0040-6090(98)01548-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel processing sequence for the formation of gated diamond field emitter array (triode system) is proposed and the feasibility is tested by investigating the field emission property. The processing scheme is based on the selective deposition of diamond by using the well established nucleation enhanced process on substrate, so called bias enhanced nucleation (BEN). The structure of substrate was patterned [SiO2/Mo(Sate)SiO2(insulator)Si(100). Our preliminary results show that the diamond field emitter is turned on at around 87 V/mu m with the current level of about several mu A. (C) 1999 Elsevier Science S.A. All rights: reserved.

引用

页码：216 / 220

页数：5

共 6 条

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