Synthesis of gallium nitride nanowires with uniform [001] growth direction

被引：21

作者：

Bae, SY

Seo, HW

Han, DS

Park, MS

Jang, WS

Na, CW

Park, J

Park, CS

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[2] Korea Basic Sci Inst, Seoul 136701, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 258卷 / 3-4期

关键词：

crystal structure; x-ray diffraction; chemical vapor deposition processes; single crystal growth; semiconducting III-V materials; light emitting diodes;

D O I：

10.1016/S0022-0248(03)01562-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report synthesis of wurtzite structured gallium nitride nanowires via a chemical vapor deposition of gallium, gallium nitride, and boron oxide mixture under ammonia atmosphere. All nanowires exhibit the same [001] growth direction. The majority of nanowires are extremely thin and long; the diameter is 5-10 nm and the length is 40-50 mum. The larger diameter nanowires exhibit a zigzag configuration with amorphous boron outerlayers. X-ray diffraction and Raman spectroscopy reveal no significant strains inside the nanowires. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：296 / 301

页数：6