AFM tip induced selective electrochemical etching of and metal deposition on p-GaAs(100) surface

被引：20

作者：

Koinuma, M ^{[1
]}

Uosaki, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV, GRAD SCH SCI, DIV CHEM, PHYS CHEM LAB, SAPPORO, HOKKAIDO 060, JAPAN

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

基金：

日本学术振兴会;

关键词：

atomic force microscopy; copper; electrochemical methods; etching; gallium arsenide; low index single crystal surfaces; models of surface chemical reactions; semiconducting surfaces; semiconductor-electrolyte interfaces; solid-liquid interfaces; surface chemical reaction; surface structure; morphology; roughness; and topography;

D O I：

10.1016/0039-6028(96)00224-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrochemical atomic force microscopic (ECAFM) measurement showed that electrochemical dissolution of a p-GaAs(100) electrode in H2SO4 solution was accelerated by the scanning of an AFM tip. When the AFM tip was scanned on the GaAs surface repeatedly, square hollows or wedges with critical dimensions ranging from 100 nm to several mu m were fabricated. The depths of the modified structures were dependent not on the scan rate but on the number of scans as well as the electrode potential. The ECAFM study also showed that the electrodeposition of Cu on p-GaAs electrode surface selectively occurred at the modified sites.

引用

页码：565 / 570

页数：6

共 22 条

[1]

[Anonymous], ELECTROCHEMISTRY MET

[2] STRUCTURE AND STABILITY OF LANGMUIR-BLODGETT-FILMS INVESTIGATED BY SCANNING FORCE MICROSCOPY [J].

CHI, LF ;

ENG, LM ;

GRAF, K ;

FUCHS, H .

LANGMUIR, 1992, 8 (09) :2255-2261

[3] OPTICAL READING AND WRITING ON GAAS USING AN ATOMIC-FORCE MICROSCOPE [J].

CHRISTENSON, GL ;

MILLER, SA ;

ZHU, ZH ;

MACDONALD, NC ;

LO, YH .

APPLIED PHYSICS LETTERS, 1995, 66 (21) :2780-2782

[4] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].

DAGATA, JA ;

SCHNEIR, J ;

HARARY, HH ;

EVANS, CJ ;

POSTEK, MT ;

BENNETT, J .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003

[5] LAYER-BY-LAYER ETCHING OF 2-DIMENSIONAL METAL CHALCOGENIDES WITH THE ATOMIC FORCE MICROSCOPE [J].

DELAWSKI, E ;

PARKINSON, BA .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (05) :1661-1667

[6] SCANNING PROBE LITHOGRAPHY OF NOVEL LANGMUIR-SCHAEFER FILMS - ELECTROCHEMICAL APPLICATIONS [J].

DEMIR, U ;

BALASUBRAMANIAN, KK ;

CAMMARATA, V ;

SHANNON, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03) :1294-1299

[7] ATOMIC-FORCE MICROSCOPE AS A TOOL FOR METAL-SURFACE MODIFICATIONS [J].

GOBEL, H ;

VONBLANCKENHAGEN, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03) :1247-1251

[8] CHARACTERIZATION OF NANOMETER SCALE WEAR AND OXIDATION OF TRANSITION-METAL DICHALCOGENIDE LUBRICANTS BY ATOMIC FORCE MICROSCOPY [J].

KIM, Y ;

HUANG, JL ;

LIEBER, CM .

APPLIED PHYSICS LETTERS, 1991, 59 (26) :3404-3406

[9] AN ELECTROCHEMICAL AFM STUDY ON ELECTRODEPOSITION OF COPPER ON P-GAAS(100) SURFACE IN HCL SOLUTION [J].

KOINUMA, M ;

UOSAKI, K .

ELECTROCHIMICA ACTA, 1995, 40 (10) :1345-1351

[10]

KOINUMA M, IN PRESS J ELECTROAN

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