AN ELECTROCHEMICAL AFM STUDY ON ELECTRODEPOSITION OF COPPER ON P-GAAS(100) SURFACE IN HCL SOLUTION

被引:22
作者
KOINUMA, M [1 ]
UOSAKI, K [1 ]
机构
[1] HOKKAIDO UNIV,FAC SCI,DEPT CHEM,PHYS CHEM LAB,SAPPORO,HOKKAIDO 060,JAPAN
关键词
ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; COPPER; ELECTRODEPOSITION; SURFACE MORPHOLOGY;
D O I
10.1016/0013-4686(95)00070-U
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In situ atomic force microscopy (AFM) was used to observe the surface structure change during electrodeposition of Cu on p-GaAs(100) surface in HCl solution. How the electrodeposition of Cu proceeded was strongly dependent on the structure of the substrate. In the portion where the surface was relatively smooth, Cu tended to deposit first, forming randomly distributed Cu clusters followed by the three dimensional growth of the clusters. On the other hand, when the surface already had some structure,lu deposited along the structure of the substrate.
引用
收藏
页码:1345 / 1351
页数:7
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