AN ELECTROCHEMICAL AFM STUDY ON ELECTRODEPOSITION OF COPPER ON P-GAAS(100) SURFACE IN HCL SOLUTION

被引：22

作者：

KOINUMA, M ^{[1
]}

UOSAKI, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC SCI,DEPT CHEM,PHYS CHEM LAB,SAPPORO,HOKKAIDO 060,JAPAN

来源：

ELECTROCHIMICA ACTA | 1995年 / 40卷 / 10期

关键词：

ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; COPPER; ELECTRODEPOSITION; SURFACE MORPHOLOGY;

D O I：

10.1016/0013-4686(95)00070-U

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In situ atomic force microscopy (AFM) was used to observe the surface structure change during electrodeposition of Cu on p-GaAs(100) surface in HCl solution. How the electrodeposition of Cu proceeded was strongly dependent on the structure of the substrate. In the portion where the surface was relatively smooth, Cu tended to deposit first, forming randomly distributed Cu clusters followed by the three dimensional growth of the clusters. On the other hand, when the surface already had some structure,lu deposited along the structure of the substrate.

引用

页码：1345 / 1351

页数：7

共 43 条

[21] OBSERVATIONS OF THE CU(1X1) ADLAYER ON AU(111) IN A SULFURIC-ACID-SOLUTION USING ATOMIC-FORCE MICROSCOPY [J].

IKEMIYA, N ;

MIYAOKA, S ;

HARA, S .

SURFACE SCIENCE, 1994, 311 (1-2) :L641-L648

[22]

ITAYA K, 1992, APPL PHYS LETT, V6, P2534

[23] THE APPLICABILITY OF SEMICONDUCTING LAYERED MATERIALS FOR ELECTROCHEMICAL SOLAR-ENERGY CONVERSION [J].

KAUTEK, W ;

GOBRECHT, J ;

GERISCHER, H .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (10) :1034-1040

[24]

KELLY JJ, 1982, J ELECTROCHEM SOC, V129, P729

[25] IN-SITU AFM AND STM INVESTIGATION OF ELECTROCHEMICAL HYDRIDE GROWTH ON GE(110) AND GE(111) SURFACES [J].

KEPLER, KD ;

GEWIRTH, AA .

SURFACE SCIENCE, 1994, 303 (1-2) :101-113

[26] IN-SITU OBSERVATIONS OF ATOMIC-RESOLUTION IMAGE AND ANODIC-DISSOLUTION PROCESS OF P-GAAS IN HCL SOLUTION BY ELECTROCHEMICAL ATOMIC-FORCE MICROSCOPE [J].

KOINUMA, M ;

UOSAKI, K .

SURFACE SCIENCE, 1994, 311 (03) :L737-L742

[27] IN-SITU OBSERVATION OF ANODIC-DISSOLUTION PROCESS OF N-GAAS IN HCL SOLUTION BY ELECTROCHEMICAL ATOMIC-FORCE MICROSCOPE [J].

KOINUMA, M ;

UOSAKI, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :1543-1546

[28] IN-SITU ATOMIC-FORCE MICROSCOPY STUDY OF THE PLATING AND STRIPPING OF SILVER [J].

KOWAL, K ;

XIE, L ;

HUQ, R ;

FARRINGTON, GC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (01) :116-122

[29] ATOMIC-STRUCTURE OF CU ADLAYERS ON AU(100) AND AU(111) ELECTRODES OBSERVED BY INSITU SCANNING TUNNELING MICROSCOPY [J].

MAGNUSSEN, OM ;

HOTLOS, J ;

NICHOLS, RJ ;

KOLB, DM ;

BEHM, RJ .

PHYSICAL REVIEW LETTERS, 1990, 64 (24) :2929-2932

[30] ATOMIC-RESOLUTION ELECTROCHEMISTRY WITH THE ATOMIC FORCE MICROSCOPE - COPPER DEPOSITION ON GOLD [J].

MANNE, S ;

HANSMA, PK ;

MASSIE, J ;

ELINGS, VB ;

GEWIRTH, AA .

SCIENCE, 1991, 251 (4990) :183-186

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