METAL ELECTRODEPOSITION ON SEMICONDUCTORS .1. COMPARISON WITH GLASSY-CARBON IN THE CASE OF PLATINUM DEPOSITION

被引：95

作者：

ALLONGUE, P

SOUTEYRAND, E

机构：

[1] LP 15 du C.N.R.S. Physique des Liquides et Electrochimie, Laboratoire de l'Université Pierre et Marie Curie

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1990年 / 286卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(90)85074-F

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The early stages of Pt electrocrystallization onto glassy carbon (GC), n-GaAs and n-InP were studied by means of (i) analysis of current-time transients and (ii) surface observations (transmission electron microscopy - TEM). It is shown that the nucleation modes depend on the substrate. As the film growth is only controlled by the overpotential between the metal clusters and the solution, an energy diagram of the interface during deposition is proposed in the case of semiconductors. The origin and the influence of the shifts in the semiconductor band edges are also discussed. © 1990.

引用

页码：217 / 237

页数：21

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