Thermal stability of a thin HfO2/ultrathin SiO2/Si structure:: Interfacial Si oxidation and silicidation

被引：75

作者：

Miyata, N

Ichikawa, M

Nabatame, T

Horikawa, T

Toriumi, A

机构：

[1] AIST, ASRC, MIRAI Project, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan

[3] ASET, MIRAI Project, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 2B期

关键词：

high-k; HfO2; thermal stability; silicide; void;

D O I：

10.1143/JJAP.42.L138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the thermal stability of a 2.6-nm-HfO2/0.3-nm-SiO2/Si structure in O-2 pressure and in an ultrahigh vacuum. The temperature and O-2-pressure dependence of Si oxidation at the, HfO2/Si interface indicates that high-vacuum conditions are required to suppress interfacial oxidation (order of 10(-7) Torr at 800degreesC). The void nucleation of Hf silicide (<1000 cm(-2)) takes place at temperatures higher than 900degreesC, which raises the issue of failure when HfO2 film is used in metal-insulator-semiconductor devices.

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收藏

页码：L138 / L140

页数：3

相关论文

共 19 条

[1] Oxygen exchange and transport in thin zirconia films on Si(100) [J].

Busch, BW ;

Schulte, WH ;

Garfunkel, E ;

Gustafsson, T ;

Qi, W ;

Nieh, R ;

Lee, J .

PHYSICAL REVIEW B, 2000, 62 (20) :R13290-R13293

[2] Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition [J].

Cho, MH ;

Roh, YS ;

Whang, CN ;

Jeong, K ;

Nahm, SW ;

Ko, DH ;

Lee, JH ;

Lee, NI ;

Fujihara, K .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :472-474

[3] Structure and stability of ultrathin zirconium oxide layers on Si(001) [J].

Copel, M ;

Gribelyuk, M ;

Gusev, E .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :436-438

[4] Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams [J].

Fujita, S ;

Maruno, S ;

Watanabe, H ;

Ichikawa, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03) :1493-1498

[5] Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100) [J].

Jeon, TS ;

White, JM ;

Kwong, DL .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :368-370

[6] MOSFET devices with polysilicon on single-layer HfO2 high-k dielectrics [J].

Kang, LG ;

Onishi, K ;

Jeon, YJ ;

Lee, BH ;

Kang, CS ;

Qi, WJ ;

Nieh, R ;

Gopalan, S ;

Choi, R ;

Lee, JC .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :35-38

[7] Effect of oxygen pressure on the structure and thermal stability of ultrathin Al2O3 films on Si(001) [J].

Kundu, M ;

Ichikawa, M ;

Miyata, N .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :492-500

[8] Thermal decomposition of an ultrathin Si oxide layer around a Si(001)-(2 x 1) window [J].

Miyata, N ;

Watanabe, H ;

Ichikawa, M .

PHYSICAL REVIEW LETTERS, 2000, 84 (05) :1043-1046

[9] THERMAL-DECOMPOSITION OF NATIVE-OXIDE ON SI(100) [J].

MIYATA, N ;

SHIGENO, M ;

ARIMOTO, Y ;

ITO, T .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :5275-5276

[10]

MIYATA N, 2002, 62 AUT M JAP SOC APP, P478