Growth of 6H-SiC on 6H-SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures

被引:36
作者
Fissel, A
Kaiser, U
Pfennighaus, K
Schroter, B
Richter, W
机构
[1] Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, D-07743 Jena
关键词
D O I
10.1063/1.115969
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial growth of 6H-SiC on 6H-SiC(0001) via two-dimensional nucleation was realized at 930 degrees C by solid-source molecular beam epitaxy using the alternate supply of Si and C. The deposition was controlled to an atomic level by surface superstructures. The growth was started on the (root 3X root 3)R30 degrees surface which turns into the (1X1) phase upon deposition of about 1 monolayer silicon and recurs after subsequent deposition of about 1 monolayer carbon. Deviations from the monolayer deposition and, moreover, growth around substrate related defects result in the deposition of 3C-SiC. (C) 1996 American Institute of Physics.
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页码:1204 / 1206
页数:3
相关论文
共 18 条
  • [1] HETEROCRYSTALLINE STRUCTURES - NEW TYPES OF SUPERLATTICES
    BECHSTEDT, F
    KACKELL, P
    [J]. PHYSICAL REVIEW LETTERS, 1995, 75 (11) : 2180 - 2183
  • [2] DUCKE E, IN PRESS I PHYS C SE
  • [3] EPITAXIAL-GROWTH OF SIC THIN-FILMS ON SI-STABILIZED ALPHA-SIC(0001) AT LOW-TEMPERATURES BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY
    FISSEL, A
    KAISER, U
    DUCKE, E
    SCHROTER, B
    RICHTER, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 154 (1-2) : 72 - 80
  • [4] LOW-TEMPERATURE GROWTH OF SIC THIN-FILMS ON SI AND 6H-SIC BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY
    FISSEL, A
    SCHROTER, B
    RICHTER, W
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3182 - 3184
  • [5] FISSEL A, IN PRESS I PHYS C SE
  • [6] ATOMIC LAYER EPITAXY OF CUBIC SIC BY GAS SOURCE MBE USING SURFACE SUPERSTRUCTURE
    FUYUKI, T
    NAKAYAMA, M
    YOSHINOBU, T
    SHIOMI, H
    MATSUNAMI, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 461 - 463
  • [7] ATOMIC LAYER EPITAXY CONTROLLED BY SURFACE SUPERSTRUCTURES IN SIC
    FUYUKI, T
    YOSHINOBU, T
    MATSUNAMI, H
    [J]. THIN SOLID FILMS, 1993, 225 (1-2) : 225 - 229
  • [8] MICROSCOPIC MECHANISMS OF ACCURATE LAYER-BY-LAYER GROWTH OF BETA-SIC
    HARA, S
    MEGURO, T
    AOYAGI, Y
    KAWAI, M
    MISAWA, S
    SAKUMA, E
    YOSHIDA, S
    [J]. THIN SOLID FILMS, 1993, 225 (1-2) : 240 - 243
  • [9] KAISER U, UNPUB
  • [10] SURFACE-STRUCTURE AND COMPOSITION OF BETA-SIC AND 6H-SIC
    KAPLAN, R
    [J]. SURFACE SCIENCE, 1989, 215 (1-2) : 111 - 134