The effect of Bi ions substituting at the Sr site in SrBi2Ta2O9

被引：44

作者：

Miura, K

Tanaka, M

机构：

[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan

[2] Sony Corp, Res Ctr, Atsugi, Kanagawa 243, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 5A期

关键词：

ferroelectrics; FeRAM; fatigue; SBT; DV-X alpha;

D O I：

10.1143/JJAP.37.2554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of the substitution of Bi ions at the Sr site in SrBi2Ta2O9 (SBT) was investigated using calculations of the electronic structures. The Sr ions in SET do not have a covalent bonding with the surrounding O ions, unlike the substituted Bi ions at the Sr site. Due to the covalent interaction, the Bi ions rather than the Sr ions favour displacement, which is consistent with the experimental result that the remanent polarization of Sr-deficient and Bi-excess SET is larger than that of stoichiometric SET. The difference in valency between the Sr and Bi ions seems to be accounted for by the compensation due to the change in the Bi ion valency at the Sr site. We conclude that there is a possibility of the substitution of Bi ions at the Sr site in Sr-deficient and Bi-excess SET.

引用

页码：2554 / 2558

页数：5

共 38 条

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