Effect of carbon on dopant-vacancy pair stability in germanium

被引:19
作者
Chroneos, A. [1 ,2 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
关键词
DIFFUSION; BORON;
D O I
10.1088/0268-1242/26/9/095017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Density functional theory calculations were used to study the interaction between carbon and isolated substitutional dopants (boron, gallium, aluminium, indium, silicon, tin, nitrogen, phosphorous, arsenic and antimony) and dopant-vacancy pairs in germanium. It is predicted that there is a range of different association preferences, with carbon being strongly bound in some cluster geometries and dopants and unbound in others. If dopant-carbon pairs form they can act as vacancy traps to form larger and bound clusters. As vacancies are important for diffusion and cluster formation in germanium, the results are discussed in view of recent experimental studies.
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页数:5
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