Atomically accurate Si grating with 5.73 nm period

被引：111

作者：

Kirakosian, A

Bennewitz, R

Crain, JN

Fauster, T

Lin, JL

Petrovykh, DY

Himpsel, FJ

机构：

[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[2] Univ Basel, Dept Phys & Astron, CH-4056 Basel, Switzerland

[3] Univ Erlangen Nurnberg, Lehrstuhl Festkorperphys, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 11期

关键词：

D O I：

10.1063/1.1401788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vicinal surface of silicon is found that exhibits an atomically accurate step pattern with a period of 5.73 nm, corresponding to 17 atomic rows per (111) terrace. It can be viewed as reconstructed Si(557) surface, where a triple step is combined with a single Si(111)7x7 unit. The driving forces for establishing regular step patterns are discussed. (C) 2001 American Institute of Physics.

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页码：1608 / 1610

页数：3

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