Holey Silicon as an Efficient Thermoelectric Material

被引：596

作者：

Tang, Jinyao ^{[1
,3
]}

Wang, Hung-Ta ^{[1
]}

Lee, Dong Hyun ^{[4
]}

Fardy, Melissa ^{[1
]}

Huo, Ziyang ^{[1
]}

Russell, Thomas P. ^{[4
]}

Yang, Peidong ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 10期

基金：

美国国家科学基金会;

关键词：

Silicon; thermoelectric; thermal conductivity; necking; nanostructure; THERMAL-CONDUCTIVITY; FIGURE; POWER;

D O I：

10.1021/nl102931z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes These "holey silicon" (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35% porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit With a ZT value of similar to 0 4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system

引用

页码：4279 / 4283

页数：5