Ion beam source for soft-landing deposition

被引:19
作者
Biesecker, JP
Ellison, GB
Wang, H
Iedema, MJ
Tsekouras, AA
Cowin, JP
机构
[1] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA
[2] Pacific NW Lab, Environm Mol Sci Lab, Richland, WA 99352 USA
关键词
D O I
10.1063/1.1148459
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Soft-landing deposition of molecular ions on various surfaces is important in making exotic radicals, modeling electrochemical double layers, and studying aqueous ion interactions, We have built a new mass-selected ion beam source for soft-landing deposition, designed to produce either positive or negative ions, including ions that depend on ion-neutral reactions (e.g., H3O+ and NH4+). The ionizer is a foe jet crossed by an electron beam, producing a wide variety of positive and negative ions. The simple, short-length, planar ion deceleration minimizes defocusing and space charge effects. It currently delivers mass-selected ions with energies down to about 1 eV and currents of about 10 nA. The design allows easy maintenance. The performance of the ion beam compares favorably with previous low-energy positive ion systems. (C) 1998 American Institute of Physics.
引用
收藏
页码:485 / 495
页数:11
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