New possibilities for ferromagnetic semiconductors

被引:88
作者
Chambers, SA [1 ]
Farrow, RF [1 ]
机构
[1] IBM Corp, Div Res, San Jose, CA 95120 USA
关键词
magnetic materials; molecular-beam epitaxy (MBE); semiconductors; spin-polarized materials; spintronics;
D O I
10.1557/mrs2003.214
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
New candidate ferromagnetic semiconductors have recently been grown by doping semiconducting transition-metal oxides with magnetic impurities. Some of these exhibit ferromagnetism at and above room temperature. The critical question is why? In many cases, complex solid-state chemistry is involved in the synthesis and drives the resulting properties. The observation of room-temperature ferromagnetism in these materials must be accompanied by a careful identification of the phases and structures present in order to accurately identify the origin of the magnetism.
引用
收藏
页码:729 / 733
页数:5
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