Impact of annealing of trapping times on charge collection in irradiated silicon detectors

被引：18

作者：

Kramberger, G.

Cindro, V.

Mandic, I.

Mikuz, M.

机构：

[1] Jozef Stefan Inst, SI-1111 Ljubljana, Slovenia

[2] Univ Ljubljana, Dept Phys, SI-1000 Ljubljana, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 579卷 / 02期

关键词：

effective carrier trapping time; silicon detectors; charge collection efficiency;

D O I：

10.1016/j.nima.2007.05.294

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The evolution of effective trapping times with time in position sensitive silicon detectors at the experiments at Large Hadron Collider (LHC) has been calculated for envisaged operation scenario. The trapping probability of holes will increase by 30% when compared to the value at the end of beneficial annealing for the same total fluence. The effective trapping probability of electrons on the other hand will decrease by around 15%. Possible operation scenarios for an upgrade of LHC (SLHC) were investigated and the differences in terms of charge trapping were compared. The simulation confirms the observations that at fluences phi(eq) > 2 x 10(15) cm(-2) the long term annealing does not affect much the CCE of highly segmented n(+)-p devices. (c) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：762 / 765

页数：4

相关论文

共 18 条

[1] Performance of p-type micro-strip detectors after irradiation to 7.5 x 1015 p cm2 [J].

Allport, PP ;

Casse, G ;

Lozano, M ;

Sutcliffe, P ;

Velthuis, JJ ;

Vossebeld, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (05) :1903-1906

[2]

*ATLAS ID, 1997, CERNLHCC9716

[3] A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique [J].

Bates, AG ;

Moll, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 555 (1-2) :113-124

[4]

CASSE G, 2005, 6 RD50 WORKSH RAD HA

[5] Bias-dependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles [J].

Cindro, V ;

Kramberger, G ;

Mikuz, M ;

Tadel, M ;

Zontar, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 450 (2-3) :288-296

[6]

FRETWURST E, 2004, 3 CERNRD50 WORKSH CE

[7]

GIANOTTI F, 2002, HEPPH0204087

[8] Annealing studies of effective trapping times in silicon detectors [J].

Kramberger, G. ;

Batic, M. ;

Cindro, V. ;

Mandic, I. ;

Mikuz, M. ;

Zavrtanik, M. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 571 (03) :608-611

[9] Charge collection properties of heavily irradiated epitaxial silicon detectors [J].

Kramberger, G ;

Cindro, V ;

Dolenc, I ;

Fretwurst, E ;

Lindström, G ;

Mandic, I ;

Mikuz, M ;

Zavrtanik, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 554 (1-3) :212-219

[10] Scintillation efficiency of nuclear recoils in a CaF2(Eu) crystal for Dark Matter search [J].

Hazama, R. ;

Ajimura, S. ;

Hayakawa, H. ;

Matsuoka, K. ;

Miyawaki, H. ;

Morikubo, K. ;

Suzuki, N. ;

Kishimoto, T. .

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002, 481 (1-3) :297-303