Charge collection properties of heavily irradiated epitaxial silicon detectors

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75 pm thicknesses (rho = 50 Omega cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10(16)cm(-2). Charge collection for minimum ionizing electrons from a Sr-90 source was measured using a charge sensitive preamplifier and a 25 ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC. (c) 2005 Elsevier B.V. All rights reserved.